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Analysis of noise characteristics of radioactive emission detectors
Šik, Ondřej ; Pfeifer, Václav (referee) ; Andreev, Alexey (advisor)
The main goal of this Master’s thesis is to describe relationship between low frequency noise spectral characteristics of Cadmium-Telluride radiation detectors depending on applied voltage and detectors reaction to illumination of various wavelengths. Also, the reaction and influence of higher operating temperatures were investigated. The noise measurements shown that the dominant noise type at low frequencies is the 1/f noise. Several samples with different resistivity were tested. By comparing results, we are able to estimate the quality of detectors and their sensibility to illumination and higher operating temperatures. We have found that all the studied CdTe detectors are sensitive to one particular wavelength of 548nm. Resulting data were processed by EasyPlot program that provided graphical representation of spectral noise characteristics. All measured characteristics of tested samples are compared and it’s estimated the similarity between the samples.
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Transport and noise characteristics of MIS structure and their aplication on the NbO capacitors
Velísek, Martin ; Majzner, Jiří (referee) ; Sedláková, Vlasta (advisor)
The aim of my work was the study of niob-oxide capacitor properties. Capacitor structure NbO-Nb2O5-MnO represents the M-I-S structure where NbO anod has metalic conductivity and MnO2 is semiconductor. The capacitor connected in the normal mode with the positive voltage on the NbO anode represents the MIS structure connected in the reverse direction, when the applied votlage increases the potencial barrier between the insulator Nb2O5 and semiconductor (MnO2). The charge carrier transport is the Nb2O5 layer is determined by the Poole-Frenkel mechanism and tuneling in the normal mode. Poole-Frenkel mechanism of the charge carrier transport is dominant for low electric field in the dielectric layer; tunneling current is dominant for the high electric field. We can estimate the effective thickness of the dielectric layer and the ratio between the Poole-Frenkel and tunelling current from the modeling of measured VA characteristics.
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Analysis of stochastic processes in electronic components
Vlčková, Irena ; Šebesta, Vladimír (referee) ; Zajaček, Jiří (advisor)
The Bachelor Thesis deals with the interference of electronic parts, using of non-destructive analysis for electronic interference in semi-conductive parts and measured samples. The thesis is divided into thematic areas: Interference types; Spectrum of random continuous signals, Spectrum calculation due to the method of periodogram and the method sub-banding coding and following FFT, Apparatus for interference measuring, Results of interference measuring. In the practical part 5 and 6, there are measuring results of chosen electronic parts, transport and interference characteristics and they are compared with theoretical presumptions.
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Analysis of Fluctuation Processes of Solar Cells
Macků, Robert ; Chobola, Zdeněk (referee) ; Franc,, Jan (referee) ; Koktavý, Pavel (advisor)
The thesis deals issue of the silicon solar cells non-destructive testing. The manufacturing technology of solar cells currently features a very high level of perfection. Its further development appears to be limited by amongst other issues imperfect diagnostic methods. The objective of presented research consists in non-destructive studies of processes that influence specimen life and reliability. To this end, I will employ mainly noise based analytical methods in connection with observation of defect optical activities, capacitance measurement etc. These methods are closely related to some specimen bulk imperfections, crystal-lattice defect induced traps, local-stress-subjected regions and, finally, breakdowns, which might bring about specimen destruction. Based on a detailed study and understanding of transport processes, regions in which noise is generated can be identified and appropriate technological measures can be proposed and adopted. Presented research focuses, first of all, on the real solar cell structures, which are inhomogeneous in their nature and are difficult to diagnose. The significant part of this study is attend to the random n-level (in most case just two-level) impulse noise, usually referred to as microplasma noise. This noise is a consequence of local breakdowns in micro-sized regions and brings about reduction of lifetime or destruction of the pn junction. The micro-sized regions have been studied separately by electrical and optical methods and defect properties have been put forward. Nevertheless, no less significant part of the thesis is devoted to the fluctuation modeling of the bulk imperfections in the semi-analytical form.
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The Noise Spectroscopy of Radiation Detectors Based on the CdTe
Zajaček, Jiří ; Štourač, Ladislav (referee) ; Hájek, Karel (referee) ; Grmela, Lubomír (advisor)
The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.
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Anyalyze of photovoltaic cell by noise diagnostic
Husák, Marek ; Sládek, Petr (referee) ; Vaněk, Jiří (advisor)
The master’s thesis deals with the noise diagnostic in the solar cells. Describes the main kinds of noises. The samples were quality and reliability screened using noise reliability indicators. The samples were surveyed by measuring the I-V characteristics, the noise spectral density as a function of forward voltage and frequency. It was calculated the noise spectral density as a function of forward current.
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Využití fraktální geometrie pro generování hudby
Skřičilová, Magdaléna
This thesis deals with algorithmic composition methods that use the principles of fractal geometry. The thesis describes the necessary theoretical foundations concerning both fractal geometry and music theory together with the principles of algorithmic composition, and then describes the process of music generation using each of the four types of fractals. Part of the process is also selecting a suitable environment for implementation. At the end, all methods are compared and evaluated.
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Transport and noise characteristics of MIS structure and their aplication on the NbO capacitors
Velísek, Martin ; Majzner, Jiří (referee) ; Sedláková, Vlasta (advisor)
The aim of my work was the study of niob-oxide capacitor properties. Capacitor structure NbO-Nb2O5-MnO represents the M-I-S structure where NbO anod has metalic conductivity and MnO2 is semiconductor. The capacitor connected in the normal mode with the positive voltage on the NbO anode represents the MIS structure connected in the reverse direction, when the applied votlage increases the potencial barrier between the insulator Nb2O5 and semiconductor (MnO2). The charge carrier transport is the Nb2O5 layer is determined by the Poole-Frenkel mechanism and tuneling in the normal mode. Poole-Frenkel mechanism of the charge carrier transport is dominant for low electric field in the dielectric layer; tunneling current is dominant for the high electric field. We can estimate the effective thickness of the dielectric layer and the ratio between the Poole-Frenkel and tunelling current from the modeling of measured VA characteristics.
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Analysis of Fluctuation Processes of Solar Cells
Macků, Robert ; Chobola, Zdeněk (referee) ; Franc,, Jan (referee) ; Koktavý, Pavel (advisor)
The thesis deals issue of the silicon solar cells non-destructive testing. The manufacturing technology of solar cells currently features a very high level of perfection. Its further development appears to be limited by amongst other issues imperfect diagnostic methods. The objective of presented research consists in non-destructive studies of processes that influence specimen life and reliability. To this end, I will employ mainly noise based analytical methods in connection with observation of defect optical activities, capacitance measurement etc. These methods are closely related to some specimen bulk imperfections, crystal-lattice defect induced traps, local-stress-subjected regions and, finally, breakdowns, which might bring about specimen destruction. Based on a detailed study and understanding of transport processes, regions in which noise is generated can be identified and appropriate technological measures can be proposed and adopted. Presented research focuses, first of all, on the real solar cell structures, which are inhomogeneous in their nature and are difficult to diagnose. The significant part of this study is attend to the random n-level (in most case just two-level) impulse noise, usually referred to as microplasma noise. This noise is a consequence of local breakdowns in micro-sized regions and brings about reduction of lifetime or destruction of the pn junction. The micro-sized regions have been studied separately by electrical and optical methods and defect properties have been put forward. Nevertheless, no less significant part of the thesis is devoted to the fluctuation modeling of the bulk imperfections in the semi-analytical form.
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The Noise Spectroscopy of Radiation Detectors Based on the CdTe
Zajaček, Jiří ; Štourač, Ladislav (referee) ; Hájek, Karel (referee) ; Grmela, Lubomír (advisor)
The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.
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